| 发明名称 |
ZnO LAYER AND SEMICONDUCTOR LIGHT EMITTING DEVICE |
| 摘要 |
A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.
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| 申请公布号 |
US2009236598(A1) |
申请公布日期 |
2009.09.24 |
| 申请号 |
US20090428567 |
申请日期 |
2009.04.23 |
| 申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
OGAWA AKIO;SANO MICHIHIRO;KATO HIROYUKI;KOTANI HIROSHI;YAMAMURO TOMOFUMI |
| 分类号 |
H01L21/20;H01L33/16;H01L33/28 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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