发明名称 |
HIGH FREQUENCY POWER AMPLIFIER |
摘要 |
A high frequency power amplifier comprises: a multi-finger transistor with transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits respectively connected between the gate electrode of a transistor cell and the input side matching circuit. The resonant circuit resonates at a second harmonic of the operating frequency of the transistor or within a predetermined range of frequencies having a center at the second harmonic of the operating frequency, and becomes a high-impedance load at the second harmonic, or an open load.
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申请公布号 |
US2009237166(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20080147542 |
申请日期 |
2008.06.27 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
GOTOU SEIKI;INOUE AKIRA;KANAYA KO;WATANABE SHINSUKE |
分类号 |
H03F3/191;H03F3/68 |
主分类号 |
H03F3/191 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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