发明名称 |
Method and apparatus for film thickness adjustment |
摘要 |
An ion source is used to adjust film thickness uniformity. Voltage is adjusted based on the film thickness to remove material on thicker parts of the substrate while removing almost no material on the thinner part of the substrate. Special procedure is used to obtain virtually uniform film without reducing minimum thickness on a substrate. Source calibration is used to maintain precise etch rate control. Film thicknesses can be adjusted to less than 0.5 nanometers uniformity.
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申请公布号 |
US2009236312(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20080077678 |
申请日期 |
2008.03.21 |
申请人 |
ADVANCED MODULAR SYSTEM, INC. |
发明人 |
MISHIN SERGEY |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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