| 摘要 |
A substrate is formed of AlxGa1-xN, wherein 0<=x<=1. The substrate is a single crystal and is used producing a Group III nitride semiconductor device. A method for producing a substrate of AlxGa1-xN, wherein 0<x<=1, includes the steps of forming a layer of AlxGa1-xN, wherein 0<x<=1, on a base material and removing the base material. The method adopts the MOCVD method using a raw material molar ratio of a Group V element to Group III element that is 1000 or less, a temperature of 1200° C. or more for forming the layer of AlxGa1-xN, wherein 0<x<=1. The base material is formed of one member selected from the group consisting of sapphire, SiC, Si, ZnO and Ga2O3. The substrate is used for fabricating a Group III nitride semiconductor device. |
