GaN-BASED FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based field effect transistor capable of reducing cost and a circuit size. SOLUTION: A depression type GaN-based field effect transistor 10 includes a capacitor 40 connected to a gate electrode 25 in series. The capacitor 40 is composed of an insulating film 29 formed on the gate electrode 25 and a second gate electrode 41 formed on the insulating film 29. A diode (Schottky diode) D1 is composed of the gate electrode 25 which is a Schottky electrode and a source electrode 26 which is an ohmic electrode. Since an external capacitor is not required for a circuit for driving the field effect transistor 10 having the capacitor 40 and the diode D1, the cost can be reduced and the size of the driving circuit can be reduced. COPYRIGHT: (C)2009,JPO&INPIT