摘要 |
PROBLEM TO BE SOLVED: To provide a plasma generator improving an in-plane uniformity while keeping a high etching rate when used for plasma etching in a semiconductor manufacturing process. SOLUTION: The plasma generator 100 includes a plate like ceramic plate 4 having a plurality of gas passing through-holes 5 passing through a thickness direction, a first electrode 1 disposed in the ceramic plate 4 and having a plurality of sets of linear electrodes 6 each having a linear discharge member 7, a plate like second electrode 2 disposed parallel such that a plane 2a and another plane 1a of the first electrode 1 face each other with a space between the first electrode 1 and the second electrode, and an electric power supply 3a and 3b having a plurality of pulse generating circuits each connected respectively to a plurality of linear electrodes 6 disposed in the first electrode 1 and capable of independently applying a nanopulse between each set of linear electrode 6 and the second electrodes 2. COPYRIGHT: (C)2009,JPO&INPIT
|