发明名称 SAM oxidative removal for controlled nanofabrication
摘要 Improved tip-patterned atomic layer deposition (ALD) is provided by using a scanning probe microscope (SPM) tip to define an oxide pattern in a self-assembled monolayer deposited on a substrate. The oxide pattern can directly define the ALD deposition pattern. Alternatively, the oxide pattern can be removed (e.g., with a chemical etch), and the resulting exposed substrate pattern can be used to define the ALD deposition pattern.
申请公布号 US2009238990(A1) 申请公布日期 2009.09.24
申请号 US20090383587 申请日期 2009.03.24
申请人 DASGUPTA NEIL;KIM YOUNG BEOM;LEE WONYOUNG;PRINZ FRIEDRICH R 发明人 DASGUPTA NEIL;KIM YOUNG BEOM;LEE WONYOUNG;PRINZ FRIEDRICH R.
分类号 B05D3/14;C23C16/04 主分类号 B05D3/14
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