SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAID DEVICE

摘要

Provided is a semiconductor device comprised of a channel layer of a nitrogen-containing Group 3 - 5 compound semiconductor, an electron supply layer which supplies electrons to the channel layer and has a trench in the surface opposite the surface facing the channel layer, a p-type semiconductor layer formed in the trench of the electron supply layer, and a control electrode formed adjacent to the p-type semiconductor layer or formed as an intermediate layer in the p-type semiconductor layer. For example, the channel current density increases while a GaN field effect transistor, which is the semiconductor device, is operated as normally off.