| 摘要 |
<p>A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer.</p> |
| 申请人 |
THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF THE NAVY;KUB, FRANCIS, J.;PHLIPS, BERNARD, F.;HOBART, KARL, D.;WULF, ERIC, A. |
发明人 |
KUB, FRANCIS, J.;PHLIPS, BERNARD, F.;HOBART, KARL, D.;WULF, ERIC, A. |
