发明名称 |
CHEMICAL-MECHANICAL POLISHING PAD, AND CHEMICAL-MECHANICAL POLISHING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide: a chemical-mechanical polishing pad capable of preventing damage of a polishing layer during chemical-mechanical polishing; and a chemical-mechanical polishing method capable of carrying out high-quality chemical-mechanical polishing over a long time by using the chemical-mechanical polishing pad. <P>SOLUTION: This chemical-mechanical polishing pad 10 used for chemical-mechanical polishing includes a polishing layer 11 having a polishing surface 20, a non-polishing surface 22 located on the side opposite to the polishing surface, and a recessed part 24 formed in a region including a center part of the non-polishing surface. The recessed part is provided with a plurality of bottom parts 25 and 26 having depths different from one another. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009218533(A) |
申请公布日期 |
2009.09.24 |
申请号 |
JP20080063696 |
申请日期 |
2008.03.13 |
申请人 |
JSR CORP |
发明人 |
TONSHO SHINJI;TANO HIROYUKI;TSUJI AKIMORI |
分类号 |
H01L21/304;B24B37/20;B24B37/26 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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