发明名称 ISOLATING DEVICE FOR POWER SEMICONDUCTOR AND METHOD OF ITS OPERATION, POWER MODULE, AND SYSTEM DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide an isolating device for a power semiconductor, to provide its operation method, and to provide a power module and a system device. <P>SOLUTION: The isolating device 6 for the power semiconductor 4 comprising n power terminals 8a-8c includes n module terminals 14a-14c, n grid terminals 16a-16c, n connecting lines 18a-18c, and tripping controllers 22a-22c. The trip controllers 22a-22c contain detectors 24a-24c and 28 for detecting the broken overcurrent fuses 20a-20c, tripping units 26a-26c, 30a-30c, and 32a-32c for tripping the overcurrent fuses 20a-20c. In a method of operating the isolating device 6, at least one of the overcurrent fuses 20a-20c is tripped when a tripping criterion is met. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009219347(A) 申请公布日期 2009.09.24
申请号 JP20090042333 申请日期 2009.02.25
申请人 SEMIKRON ELEKTRONIK GMBH & CO KG 发明人 JAIR DO NASCIMENTO;BITTNER ROLAND
分类号 H02M7/48 主分类号 H02M7/48
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