| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory system, capable of avoiding deterioration of a NAND flash memory by the number of accesses. <P>SOLUTION: The memory system comprises: a nonvolatile memory including a plurality of blocks disposed therein; a random access memory temporarily storing data to be written to the nonvolatile memory or data read from the nonvolatile memory; and a control part controlling the nonvolatile memory and the random access memory. The nonvolatile memory includes a main memory area in which the blocks are divided by a first management unit designated by a logic address and a cache area in which the blocks are divided by a second management unit designated by a logic address and smaller than the first management unit, and the control part dynamically changes the block number in the main memory area and the block number in the cache area within the nonvolatile memory. <P>COPYRIGHT: (C)2009,JPO&INPIT |
