| 摘要 |
<P>PROBLEM TO BE SOLVED: To facilitate tapering of a bottom portion of a GaN substrate in a Group III nitride semiconductor light-emitting device including the GaN substrate serving as a growth substrate. <P>SOLUTION: In the production method, firstly, a Group III nitride semiconductor layer 11, an ITO electrode 15, a p-electrode 12, and an n-electrode 13 are formed on a top surface of a GaN substrate 10 through MOCVD. Thereafter, the GaN substrate 10 is thinned through mechanical polishing of the bottom surface thereof, and then scratches are removed through chemical mechanical polishing, to thereby planarize the bottom surface. Subsequently, a mask 14 is formed on the bottom surface of the GaN substrate 10, followed by wet etching with phosphoric acid. By virtue of anisotropy in etching of GaN with phosphoric acid, a tapered surface 10a is exposed so as to be inclined by about 60° with respect to the GaN substrate 10. <P>COPYRIGHT: (C)2009,JPO&INPIT |
