| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a fast signal processing speed and has high reliability of a wiring film. <P>SOLUTION: The method of manufacturing the semiconductor device including a recess forming step of forming a recess 3 in a film 2 includes an electromagnetic wave setting chemical providing step of providing an electromagnetic wave setting chemical on an inner surface side of the recess after the recess forming step, and a curing step of curing the electromagnetic wave setting chemical by irradiation with an electromagnetic wave after the electromagnetic wave setting chemical providing step. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
| 申请公布号 |
JP2009218347(A) |
申请公布日期 |
2009.09.24 |
| 申请号 |
JP20080059536 |
申请日期 |
2008.03.10 |
| 申请人 |
CONSORTIUM FOR ADVANCED SEMICONDUCTOR MATERIALS &RELATED TECHNOLOGIES |
发明人 |
ANDO YASUTO |
| 分类号 |
H01L21/768;H01L21/312;H01L21/3205;H01L23/522 |
主分类号 |
H01L21/768 |
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