| 摘要 |
A memory controller for writing data in a first semiconductor memory including a plurality of memory cells having series-connected current paths and charge storage layers includes a host interface which configured to be receivable of first data from a host apparatus, a second semiconductor memory which temporarily holds second data, and an arithmetic unit which generates the second data in accordance with the state of the first semiconductor memory, temporarily holds the second data in the second semiconductor memory, and writes the first and second data in the first semiconductor memory. When writing the second data, the arithmetic unit does not select a word line adjacent to a select gate line, and selects a word line not adjacent to the select gate line.
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