发明名称 |
Semiconductor device having resistance based memory array, method of reading, and systems associated therewith |
摘要 |
In one embodiment, the semiconductor device includes a non-volatile memory cell array. Memory cells of the non-volatile memory cell array are resistance based, and each memory cell has a resistance that changes over time after data is written into the memory cell. A write address buffer is configured to store write addresses associated with data being written into the non-volatile memory cell array, and a read unit is configured to perform a read operation to read data from the non-volatile memory cell array. The read unit is configured to control a read current applied to the non-volatile memory cell array during the read operation based on whether a read address matches one of the stored write addresses and at least one indication of settling time of the data being written into the non-volatile memory cell array.
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申请公布号 |
US2009237978(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20080292891 |
申请日期 |
2008.11.28 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KWANG JIN;CHOI BYUNG GIL |
分类号 |
G11C7/10;G11C11/21 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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