发明名称 PROCESS FOR PRODUCING A PIEZOELECTRIC FILM, FILM FORMING APPARATUS, AND PIEZOELECTRIC FILM
摘要 A piezoelectric film is formed on a substrate by a sputtering technique at a film formation temperature higher than a Curie temperature. An electric field is formed across the piezoelectric film in a direction heading from a surface side of the piezoelectric film toward the substrate side before a temperature of the piezoelectric film having been formed falls to a temperature lower than the Curie temperature, polarization processing being caused to begin by the formation of the electric field across the piezoelectric film. The temperature of the piezoelectric film is allowed to fall to a temperature lower than the Curie temperature in the state in which the electric field is being formed.
申请公布号 US2009236949(A1) 申请公布日期 2009.09.24
申请号 US20090409185 申请日期 2009.03.23
申请人 FUJII TAKAMICHI;TSUKAMOTO RYUJI 发明人 FUJII TAKAMICHI;TSUKAMOTO RYUJI
分类号 H01L41/04;H01L41/22 主分类号 H01L41/04
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