发明名称 |
NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT |
摘要 |
A nonvolatile memory device using variable resistive element with reduced layout size and improved performance is provided. The nonvolatile memory device comprising: a main word line; multiple sub-word lines, wherein each of the sub-word line is connected to multiple nonvolatile memory cells; and a section word line driver which controls voltage level of the multiple sub-word lines, wherein the section word line driver includes multiple pull-down elements which are connected to each of the multiple sub-word lines and a common node and a selection element which is connected to the common node and the main word line.
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申请公布号 |
US2009237986(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20090406441 |
申请日期 |
2009.03.18 |
申请人 |
CHOI BYUNG-GIL;KIM DU-EUNG |
发明人 |
CHOI BYUNG-GIL;KIM DU-EUNG |
分类号 |
G11C11/00;G11C8/00;G11C8/08 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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