发明名称 |
TARGET FOR LASER VAPOR DEPOSITION AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a target for laser vapor deposition which hardly generates cracks even when it is irradiated with a laser without using a backing plate and is wide in applicable composition range of an oxide superconductive sintered compact. <P>SOLUTION: The target for laser vapor deposition includes an oxide superconductive sintered compact. The target is characterized in that the value of the linear thermal expansion coefficient in the direction perpendicular to the use surface of the target is lager by at least 10% than the value of the linear thermal expansion coefficient in a direction parallel to the use surface of the target. <P>COPYRIGHT: (C)2009,JPO&INPIT |
申请公布号 |
JP2009215629(A) |
申请公布日期 |
2009.09.24 |
申请号 |
JP20080062631 |
申请日期 |
2008.03.12 |
申请人 |
DOWA ELECTRONICS MATERIALS CO LTD |
发明人 |
MURAKAMI NORIFUMI |
分类号 |
C23C14/24;C04B35/00;C23C14/08;C23C14/28;H01B13/00 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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