| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain double patterning by forming an extremely fine space pattern by transferring a fine line of a first resist to a second resist by positive/negative reversal and carrying out resolution of the second resist. <P>SOLUTION: This double patterning method includes processes for applying a chemically amplified positive resist composition onto a processable substrate to form a resist film; obtaining a first positive pattern on the film; providing the positive pattern with resistance to an organic solvent used for a reversal film forming composition; and forming a reversal film of a second chemically amplified positive resist material to obtain a second positive pattern on the film, wherein an alkaline developer process for obtaining a second positive resist pattern includes dissolving away the first positive pattern reversed to be soluble in the alkaline developer and achieving reversal transfer of the first resist pattern in a process of obtaining a second pattern. Consequently, even if the second resist film for the reversal film is formed using a solvent containing a hydroxy group or a high polar solvent, the second resist material can be embedded in a clearance without damaging the first positive resist pattern, and the first positive pattern can be dissolved away in the alkaline developer, and positive/negative reversal of high accuracy can be carried out in a simple process. <P>COPYRIGHT: (C)2009,JPO&INPIT |
