| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a versatile method of manufacturing integrated circuits (24, 26, 28, ..., 30) from flexible membranes formed of very thin low-stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. <P>SOLUTION: The semiconductor devices (24, 26, 28, ..., 30) are formed in a semiconductor layer of a membrane (36). Firstly, the semiconductor membrane layer (36) is formed from a substrate (18) of a standard thickness, and then a thin surface layer of the substrate is etched or polished away. In another version, the flexible membrane is used as a support and electrical interconnection for conventional integrated circuit die bonded thereto, with interconnections formed in multiple layers in the membrane. Multiple dies are connected to one such membrane, which is then packaged as a multi-chip module. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
