| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage which attains low power consumption by reducing a current flowing through a memory, and to provide its fabrication process. SOLUTION: A nonvolatile storage comprises a substrate, a first electrode provided on the substrate, a second electrode provided above the first electrode to intersect the first electrode, and a memory provided between the first and second electrodes, wherein at least any one of the surface area of a first memory opposite to the first electrode of the memory or the surface area of a second memory opposite to the second electrode of the memory is smaller than the cross-sectional area of the first and second electrodes opposite to each other because the first and second memories intersect. COPYRIGHT: (C)2009,JPO&INPIT |
