| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS semiconductor device which miniaturizes a device size and includes a zener diode for gate protection enlarging a current-carrying capability. SOLUTION: A gate electrode 5 is formed by an n<SP>+</SP>polysilicon 7 and a p<SP>+</SP>polysilicon 8 which are used as the zener diode, and the p<SP>+</SP>polysilicon 8 is formed on a thick insulating film 6, and this p<SP>+</SP>polysilicon 8 is connected with a source electrode 13. Thereby, the zener diode is inserted between a gate terminal G and a source terminal S. Since this zener diode is formed in an active region, the current-carrying capability is enlarged while miniaturizing a chip size. COPYRIGHT: (C)2009,JPO&INPIT
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