| 摘要 |
PROBLEM TO BE SOLVED: To provide a flux treating device where a flux can be removed safely after growing a group III nitride. SOLUTION: The flux treating device to perform the removal of the flux by immersing a reacting bessel 107 into a treating solution 218 after growing a group III nitride crystal by a flux method has a treating vessel 301 to hold the treating solution 218, a temperature sensor 219 for the treating solution 218 and a temperature regulator 221. The flux treating device is constituted so that the temperature of the treating solution 218 is controlled to be in a predetermined temperature range via the temperature regulator 221 basing on a measured result by the temperature sensor 219. COPYRIGHT: (C)2009,JPO&INPIT
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