发明名称 |
METHODS AND APPARATUS FOR FORMING MEMORY LINES AND VIAS IN THREE DIMENSIONAL MEMORY ARRAYS USING DUAL DAMASCENE PROCESS AND IMPRINT LITHOGRAPHY |
摘要 |
The present invention provides systems, apparatus, and methods for forming three dimensional memory arrays using a multi-depth imprint lithography mask and a damascene process An imprint lithography mask for manufacturing a memory layer in a three dimensional memory is described. The mask includes a translucent material formed with features for making an imprint in a transfer material to be used in a damascene process, the mask having a plurality of imprint depths. At least one imprint depth corresponds to trenches for forming memory lines and at least one depth corresponds to holes for forming vias. Numerous other aspects are disclosed. |
申请公布号 |
WO2009088922(A3) |
申请公布日期 |
2009.09.24 |
申请号 |
WO2008US88628 |
申请日期 |
2008.12.31 |
申请人 |
SANDISK 3D, LLC;SCHEUERLEIN, ROY, E. |
发明人 |
SCHEUERLEIN, ROY, E. |
分类号 |
H01L21/8239;H01L21/027;H01L21/28 |
主分类号 |
H01L21/8239 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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