| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photovoltaic device which has high conversion efficiency and is superior in durability. <P>SOLUTION: The photovoltaic device includes a silicon substrate 14, a back electrode 12, a doped silicon layer 16, and a front electrode 18. The silicon substrate has a first surface 144 and a second surface 140 opposite to the first surface, and a plurality of separately located cavities 142 are formed on the first surface of the silicon substrate, and the back electrode is located on the second surface of the silicon substrate and is in ohmic contact with the second surface, and the doped silicon layer is located on an inside surface 146 of each cavity, and the front electrode is located on the first surface of the silicon substrate and includes a carbon nanotube structure. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
