| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability by suppressing the penetration of cracks from a sidewall of a semiconductor chip in dicing. SOLUTION: On the edge of the surface of a semiconductor chip region 10, a planarization insulation film region 30 is formed while surrounding an integrated circuit region 31. The planarization insulation film region 30 is formed by replacing a portion where a conventional dummy metal layer has been formed with a dummy insulation film. On a first interlayer insulating film 12 extended from the integrated circuit region 31, three dummy insulation film patterns 20 are formed at a fixed interval. Also, a second interlayer insulating film 14 extended from the integrated circuit region 31 covers the three dummy insulation film patterns 20, and three dummy insulation film patterns 21 are formed at a fixed interval also in the second interlayer insulation film 14. Furthermore, a third interlayer insulation film 16 extended from the integrated circuit region 31 covers the three dummy insulation film patterns 21, and three dummy insulation film patterns 22 are formed at a fixed interval also in the third interlayer insulation film 16. COPYRIGHT: (C)2009,JPO&INPIT |
