发明名称 |
SEMICONDUCTOR DEVICE WITH FINFET AND METHOD OF FABRICATING THE SAME |
摘要 |
A FinFET semiconductor device has an active region formed of a semiconductor substrate and projecting from a surface of the substrate. A fin having a first projection and a second projection composed of the active region are arranged in parallel and at each side of a central trench formed in a central portion of the active region. Upper surfaces and side surfaces of the first projection and the second projection comprise a channel region. A channel ion implantation layer is provided at a bottom of the central trench and at a lower portion of the fin. A gate oxide layer is provided on the fin. A gate electrode is provided on the gate oxide layer. A source region and a drain region are provided in the active region at sides of the gate electrode. A method of forming such a device is also provided.
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申请公布号 |
US2009239346(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20090477348 |
申请日期 |
2009.06.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SUNG-MIN;KIM MIN-SANG;YUN EUN-JUNG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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