METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL
摘要
<p>Disclosed is a method for producing a silicon carbide single crystal, which is characterized by comprising a step of coating the back side of a seed crystal (1) with a thermosetting resin (2) containing a silicon component before a step of placing the seed crystal (1) into a container (10) of an apparatus for producing a silicon carbide single crystal.</p>
