发明名称 TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a transistor including an insertion layer for controlling a threshold voltage. SOLUTION: The transistor includes a channel layer, a source and a drain respectively contacting ends of the channel layer, a gate electrode separated from the channel layer, a gate insulating layer interposed between the channel layer and the gate electrode, and the insertion layer that is formed between the channel layer and the gate insulating layer and has a work function different from that of the channel layer. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009218562(A) 申请公布日期 2009.09.24
申请号 JP20080313263 申请日期 2008.12.09
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM SUN-IL;PARK YOUNG-SOO;SONG I-HUN;KIM CHANG-JUNG;PARK JAE-CHUL;KIM SANG-WOOK
分类号 H01L29/786 主分类号 H01L29/786
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