GATE INSULATING MATERIAL, GATE INSULATING FILM, AND ORGANIC FIELD EFFECT TRANSISTOR

摘要

Disclosed is a gate insulating material having high chemical resistance and small hysteresis. A resist and an organic semiconductor coating liquid can exhibit excellent coatability to the gate insulating material. Specifically disclosed is a gate insulating material containing a polysiloxane having at least a silane compound represented by general formula (1) and an epoxy group-containing silane compound represented by general formula (2) as copolymerization components. R1 mSi(OR2)4-m (1) (In the formula, R1 represents a hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group; R2 represents an alkyl group or a cycloalkyl group; and m represents an integer of 1-3.) R3 nR4 lSi(OR5)4-n-l (2) (In the formula, R3 represents an alkyl group or cycloalkyl group having one or more epoxy groups in a part of a chain; R4 represents a hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group; R5 represents an alkyl group or a cycloalkyl group; l represents an integer of 0-2; n represents 1 or 2; and l + n = 3.)