发明名称 FILM FORMATION METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING ELECTRONIC EQUIPMENT
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a film-forming device and a film formation method capable of improving a film formation atmosphere, and to form a film having good characteristics by the device and the method. <P>SOLUTION: The film-forming device performs heat treatment for a liquid material 3 arranged on a substrate S1 in a treatment chamber 11 to solidify the liquid material. In the treatment chamber, the device includes: a stage 15 on which the substrate is mounted; a heating means 15a for heating the substrate; a cover 17 for covering the substrate; and a supply means for supplying inert gas N<SB>2</SB>into the cover. For example, the inert gas supplied into the cover is discharged from a space at the bottom of the sidewall of the cover. By the device, the heat treatment is performed while the cover restricts ambient gas with which the liquid material on the substrate can come into contact. Also, the heat treatment is performed while continuously supplying clean inert gas onto the liquid material on the substrate, and discharging impurities, such as reactive gas (cracked gas) generated by heating, to the outside of the cover. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009218430(A) 申请公布日期 2009.09.24
申请号 JP20080061598 申请日期 2008.03.11
申请人 SEIKO EPSON CORP 发明人 KATO MAKOTO;TANAKA HIDEKI
分类号 H01L21/208;H01L21/336;H01L29/786;H01L31/04 主分类号 H01L21/208
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