发明名称 SILICON SUBSTRATE FOR MAGNETIC RECORDING AND MANUFACTURING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an Si substrate for magnetic recording medium having excellent surface flatness without making a processing process and deposition process of a magnetic recording layer complex, as well as a thermal conductivity that is unchanged from a bulk substrate of a single crystal and a polycrystal. <P>SOLUTION: A metal film is deposited (S7) on a polycrystalline silicon substrate after rough polishing (S6) and silicidated or silicon-alloyed (S8). Thereafter, the film is subjected to precision polishing (S9) such as CMP polishing to increase the flatness of the substrate. Accordingly, the Si substrate for a magnetic recording medium obtains a flat and smooth surface without being influenced by a difference between crystal orientations of the polycrystalline grains and the presence of crystal grain boundary, and obtains heat resistance and a thermal conductivity approximately equivalent to a bulk Si substrate. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009217870(A) 申请公布日期 2009.09.24
申请号 JP20080057785 申请日期 2008.03.07
申请人 SHIN ETSU CHEM CO LTD 发明人 OHASHI TAKESHI
分类号 G11B5/73;G11B5/738;G11B5/84 主分类号 G11B5/73
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