| 摘要 |
PROBLEM TO BE SOLVED: To provide a combination of materials for inducing tensile stress to a channel region of an NFET. SOLUTION: A semiconductor device includes a field effect transistor formed on a semiconductor layer and a first material having a first lattice constant. The field effect transistor includes: a gate insulator on the first material; a conductive gate provided on the gate insulator; a channel region arranged in the first material below the gate; a source region; and a drain region. The source and drain regions are at least partially formed by a second material of which an effective lattice constant is smaller than that of the first material, are arranged at both the sides of the channel region in a semiconductor layer, and the second material induces tensile stress to the channel region. COPYRIGHT: (C)2009,JPO&INPIT
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