| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist removing method in high dose implantation process capable of easily peeling a resist film hardened by implanting high-concentration high-energy ion in a semiconductor manufacturing process. SOLUTION: The resist removing method in the high dose implantation process includes: a plasma processing process of peeling without popping the hardened layer, formed on a resist film by high-concentration high-energy ion implantation to a substrate, with gently irradiating plasma generated under ordinary temperature vacuum; and a chemical processing process of cleaning the layer with a chemical solution under ordinary pressure in a state where the hardened layer is removed and a non-hardened layer is left behind, and then washing away the chemical solution with pure water. By the method, residual impurities of the non-hardened layer is prevented from being fixed to the substrate. COPYRIGHT: (C)2009,JPO&INPIT
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