SEMICONDUCTOR STORAGE DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a dielectric film which can secure crystallinity sufficient for obtaining a high dielectric constant even when the dielectric film is thinned up to film thickness allowed to be applied to a capacitor of a DRAM cell. SOLUTION: Transistors, word lines 3 and bit lines 6 are formed on a silicon substrate 1 and a conductive plug 5 formed by polysilicon is drawn out from one side of a diffusion layer 15 of each transistor. Further, a second conductive plug 8 is connected to the upper part of the conductive plug 5 and the second conductive plug 8 is connected to a cylindrical capacitor lower electrode 10 through a reaction barrier layer 9. Titanium dioxide 11 obtained by adding nickel or cobalt in a range of 0.5 to 10% is formed on the surface of the lower electrode 10, and a capacitor is composed of the upper electrode 12, the lower electrode 10 and the titanium dioxide 11. COPYRIGHT: (C)2009,JPO&INPIT