发明名称 LIGHT EMITTING DIODE
摘要 A semiconductor device including a wafer-level LED includes a semiconductor structure coupled to first and second electrodes. The semiconductor includes a P-doped portion of a first layer to an N-doped portion of a second layer. The first layer includes a surface configured to emit light. The first electrode is electrically coupled to the P-doped portion of the first layer on a first side of the semiconductor structure. The first side is adjacent to the surface that is configured to emit the light. The second electrode is electrically coupled to the N-doped portion of the second layer on a second side of the semiconductor structure. The second side is also adjacent to the surface that configured to emit light.
申请公布号 US2009236615(A1) 申请公布日期 2009.09.24
申请号 US20080051390 申请日期 2008.03.19
申请人 INFINEON TECHNOLOGIES AG 发明人 FATT CHIANG CHAU;TING KUEK HSIEH
分类号 H01L21/00;H01L33/38;H01L33/62 主分类号 H01L21/00
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