发明名称 TRIMMING TECHNIQUE FOR HIGH VOLTAGE AMPLIFIERS USING FLOATING LOW VOLTAGE STRUCTURES
摘要 The system contains a first MOS transistor having a first source element, a first drain element, and a first gate element. A first low voltage current source has two ends. The ends of the low voltage current source are connected to at least two of the first MOS transistor elements. At least one first Zener clamp is in parallel with the low voltage current source.
申请公布号 US2009237163(A1) 申请公布日期 2009.09.24
申请号 US20080053534 申请日期 2008.03.21
申请人 BHATTACHARYA ANINDYA;COX DAVID F 发明人 BHATTACHARYA ANINDYA;COX DAVID F.
分类号 H03F3/45 主分类号 H03F3/45
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