发明名称 |
COAXIAL MICROWAVE ASSISTED DEPOSITION AND ETCH SYSTEMS |
摘要 |
<p>Disclosed are systems for achieving improved film properties by introducing additional processing parameters, such as a movable position for the microwave source and pulsing power to the microwave source, and extending the operational ranges and processing windows with the assistance of the microwave source. A coaxial microwave antenna is used for radiating microwaves to assist in physical vapor deposition (PVD) or chemical vapor deposition (CVD) systems. The system may use a coaxial microwave antenna inside a processing chamber, with the antenna being movable between a substrate and a plasma source, such as a sputtering target, a planar capacitively generated plasma source, or an inductively coupled source. In a special case when only a microwave plasma source is present, the position of the microwave antenna is movable relative to a substrate. The coaxial microwave antenna adjacent to the plasma source can assist the ionization more homogeneously and allow substantially uniform deposition over large areas.</p> |
申请公布号 |
WO2009117229(A2) |
申请公布日期 |
2009.09.24 |
申请号 |
WO2009US35325 |
申请日期 |
2009.02.26 |
申请人 |
APPLIED MATERIALS, INC.;STOWELL, MICHAEL, W.;KRISHNA, NETY;HOFMANN, RALF;GRIFFITH, JOE |
发明人 |
STOWELL, MICHAEL, W.;KRISHNA, NETY;HOFMANN, RALF;GRIFFITH, JOE |
分类号 |
C23C16/511;C23C14/22;H01L21/203;H01L21/205;H01L21/302 |
主分类号 |
C23C16/511 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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