| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with high transverse brightness. <P>SOLUTION: The semiconductor light-emitting device 10 includes a substrate 20, a light-emitting element 30 mounted on the substrate 20, a wavelength conversion layer 40 located above the element 30 and made of a translucent member containing a fluorescent material for converting the wavelength of light from a light-emitting layer, and a reflective member 50 located adjacent to a side face of the wavelength conversion layer 40 and the light-emitting element 30. <P>COPYRIGHT: (C)2009,JPO&INPIT |
