| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a driving method of a non-volatile DRAM which can be driven by a low internal voltage. <P>SOLUTION: This driving method of the non-volatile DRAM includes a recall mode and a plurality of cells, the recall mode includes a first step for charging a cell capacitor 207 of a plurality of cells, a second step for discharging the cell capacitor 207 of which the threshold voltage is lower relatively out of the plurality of cells, and a third step for refreshing the plurality of cells. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
