发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor integrated circuit device, which employs a front wiring structure to precisely and stably mount an elastic structure on a wiring board and stabilizes a bonding process of a semiconductor chip to perform assembling of the device with high yield. <P>SOLUTION: The method of manufacturing a semiconductor integrated circuit device includes providing the wiring board on a principal surface of the semiconductor chip through the elastic structure, electrically connecting one end part of wiring of the wiring board to an external terminal on the principal surface of the semiconductor chip, and electrically connecting a land part being the other end part of wiring of the wiring board to a bump electrode. A lead 11 being the wiring of the wiring board has a notch 27, and an expanded anchor wire 32 of which the effective area is larger than that of the wiring is formed in the wiring on the terminal side of the notch 27. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009218621(A) 申请公布日期 2009.09.24
申请号 JP20090153520 申请日期 2009.06.29
申请人 RENESAS TECHNOLOGY CORP 发明人 MIYAZAKI CHUICHI;AKIYAMA YUKIHARU;SHIBAMOTO MASAKUNI;SHIMOISHI TOMOAKI;ANJO ICHIRO;NISHI KUNIHIKO;NISHIMURA ASAO;TANAKA HIDEKI;KIMOTO RYOSUKE;TSUBOSAKI KUNIHIRO;HASEBE AKIO
分类号 H01L23/12;H01L21/60 主分类号 H01L23/12
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