| 摘要 |
PROBLEM TO BE SOLVED: To provide technique for reducing forward resistance by making good use of a pn junction diode, with respect to a diode having a p-type semiconductor region formed on part of a surface of an n-type semiconductor region. SOLUTION: The diode has the n-type semiconductor region 22, the p-type semiconductor region 14 provided on part of the surface of the n-type semiconductor region 22, an anode electrode 2 (surface electrode) which is in contact with the surface of the n-type semiconductor region 22 and a surface of the p-type semiconductor region 14 and makes a Schottky junction Jb to at least the surface of the n-type semiconductor region 22, and an insulation region 30 having a right side surface 30b (first side surface) and a left side surface 30a (second side surface) being in contact with the n-type semiconductor region 22. The right side surface 30b faces a second n-type semiconductor region 22b disposed below the Schottky junction Jb, and the left side surface 30a faces a first n-type semiconductor region 22a disposed below the pn junction 13 between the n-type semiconductor region 22 and p-type semiconductor region 14. COPYRIGHT: (C)2009,JPO&INPIT |
