| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance storage element allowed to be driven with a low voltage and a low current, and to provide a method for manufacturing the resistance storage element. SOLUTION: The method for manufacturing the resistance storage element includes a process for forming a noble metal film 54 composing a lower electrode layer on the upper part of a semiconductor substrate 10, a process for forming a transition metal film 46 on the noble metal film 54, a process for forming an upper electrode layer including a noble metal oxide film 58 on the transition metal film 54, and a process for supplying oxygen contained in the noble metal oxide film 58 to the transition metal film 46 to oxidize the transition metal film 46 and forming a transition metal oxide film 48 composing a resistance storage layer. COPYRIGHT: (C)2009,JPO&INPIT
|
