| 摘要 |
A disclosed embodiment is a programmable memory cell comprising an elevated ground node having a voltage greater than a common ground node by an amount substantially equal to a voltage drop across a trigger point adjustment element. In one embodiment, the trigger point adjustment element can be a diode. The trigger voltage of the programmable memory cell is raised closer to a supply voltage when current passes through the trigger point adjustment element during a write operation. The programmable memory cell can comprise a pair of cross-coupled inverters, and first and second programmable antifuses that can be coupled to each inverter in the pair of cross-coupled inverters. Since the trigger voltage of the programmable memory cell is raised closer to the supply voltage, a programmed antifuse can easily reach below the trigger voltage and result in a successful write operation even when the supply voltage is a low voltage.
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