发明名称 POLYCRYSTALLINE SILICON REACTOR
摘要 A polycrystalline silicon reactor 1 which can prevent polycrystalline silicon which deposits on the surface of an electrode 5 holding a silicon seed rod 4 from being peeled off is provided. In a polycrystalline silicon reactor 1 which applies an electric current to a silicon seed rod 4 provided within a furnace, thereby heating the silicon seed rod 4, brings a source gas supplied into the furnace into reaction, and deposits polycrystalline silicon on the surface of the silicon seed rod 4, the reactor includes, at a bottom plate 2 (furnace bottom) of the furnace, an electrode holder 10 provided so as to be electrically insulated from the bottom plate 2 (furnace bottom), and a seed rod holding electrode 15 connected to the electrode holder 10, and holding the silicon seed rod 4 toward the upside. Concavo-convex portions (male thread portion) 15B exposed to a furnace atmosphere is provided at an outer peripheral surface of the seed rod holding electrode 15.
申请公布号 US2009238992(A1) 申请公布日期 2009.09.24
申请号 US20090406335 申请日期 2009.03.18
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 ENDOH TOSHIHIDE;TEBAKARI MASAYUKI;ISHII TOSHIYUKI;SAKAGUCHI MASAAKI
分类号 H05B6/10;H05B6/02 主分类号 H05B6/10
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