发明名称 |
FILM DEPOSITION OF AMORPHOUS FILMS WITH A GRADED BANDGAP BY ELECTRON CYCLOTRON RESONANCE |
摘要 |
A method is described of forming a film of an amorphous material on a substrate (14) by deposition from a plasma. The substrate (14) is placed in an enclosure, a film precursor gas is introduced into the enclosure through pipes (20), and unreacted and dissociated gas is extracted from the enclosure through pipes (22) so as to provide a low pressure therein. Microwave energy-is introduced into the gas within the enclosure as a sequence of pulses at a given frequency and power level to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The frequency and/or power level of the pulses is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.
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申请公布号 |
KR20090101166(A) |
申请公布日期 |
2009.09.24 |
申请号 |
KR20097011243 |
申请日期 |
2007.10.26 |
申请人 |
DOW CORNING CORPORATION;ECOLE POLYTECHNIQUE |
发明人 |
ROCA I CABARROCAS PERE;BULKIN PAVEL;DAINEKA DMITRI;LEEMPOEL PATRICK;DESCAMPS PIERRE;KERVYN DE MEERENDRE THIBAULT |
分类号 |
C23C16/24;C23C16/511;H01J37/32;H01L31/20 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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