发明名称 |
POLYCRYSTALLINE SILICON REACTOR |
摘要 |
PURPOSE: A polycrystalline silicon furnace is provided to prevent exfoliation of polycrystalline silicon educed on a core rod maintaining electrode by forming a protrusion part on the whole surface of the core rod maintaining electrode installed at the polycrystalline silicon furnace. CONSTITUTION: A polycrystalline silicon furnace heats a silicon core rod. The polycrystalline silicon furnace educes polycrystalline silicon on the surface of the silicon core rod by reacting gas supplied to the furnace. The polycrystalline silicon furnace includes an electrode holder(10) and a core rod maintain electrode(2). The electrode holder is formed at the bottom of the furnace to an electrical-insulating state. The core rod maintaining electrode is connected to the electrode holder. The core rod maintaining electrode maintains a direction of the core rod. A protrusion part exposed on the surface is formed to the outer circumference of the core rod maintaining electrode.
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申请公布号 |
KR20090101098(A) |
申请公布日期 |
2009.09.24 |
申请号 |
KR20090022671 |
申请日期 |
2009.03.17 |
申请人 |
MITSUBISHI MATERIALS CORP. |
发明人 |
ENDOH TOSHIHIDE;TEBAKARI MASAYUKI;ISHII TOSHIYUKI;SAKAGUCHI MASAAKI |
分类号 |
C01B33/035;F27B14/06 |
主分类号 |
C01B33/035 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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