DOPING WITH ALD TECHNOLOGY

摘要

PROBLEM TO BE SOLVED: To provide doping which allows the concentration and uniformity of a deposited dopant to be controlled by blocking some of the available binding sites for a dopant precursor with a blocking reactant and allows the blocking reactant to be introduced prior to introduction of the dopant precursor in an ALD (atomic layer deposition) process or allows the blocking reactant and the dopant precursor to be introduced simultaneously.

SOLUTION: A method for doping a substrate surface or an interface between two thin films by the ALD process is provided. The ALD process generally comprises steps of providing a substrate to a reaction space and depositing a dopant on the substrate in a single ALD cycle, in which the substrate is contacted with a first reactant that is a blocking reactant such that the blocking reactant adsorbs in a self-limiting manner on the surface of the substrate.

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