发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
An aspect of the invention provides a method of manufacturing a method of manufacturing a semiconductor element comprises the steps of: growing epitaxially a semiconductor layer on top of a semiconductor substrate; forming a patterned portion of the grown semiconductor layer by forming a pattern by a patterning process on top of the grown semiconductor layer; removing a portion of the semiconductor layer other than the patterned portion by a first etching method with a first etchant; and immersing a resultant from the first etching method in a second etchant that etches only the semiconductor substrate by a second etching method thereby removing the substrate from the semiconductor layer.
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申请公布号 |
US2009239361(A1) |
申请公布日期 |
2009.09.24 |
申请号 |
US20090401754 |
申请日期 |
2009.03.11 |
申请人 |
OKI DATA CORPORATION |
发明人 |
IGARI TOMOKI;OGIHARA MITSUHIKO;FUJIWARA HIROYUKI;FURUTA HIRONORI;SUZUKI TAKAHITO;SAGIMORI TOMOHIKO;NAKAI YUSUKE |
分类号 |
H01L21/365;H01L33/32 |
主分类号 |
H01L21/365 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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